APT4F120K Microchip Technology
auf Bestellung 1121 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.7 EUR |
| 100+ | 4.07 EUR |
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Technische Details APT4F120K Microchip Technology
Description: MOSFET N-CH 1200V 4A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Rds On (Max) @ Id, Vgs: 4.6Ohm @ 2A, 10V, Power Dissipation (Max): 225W (Tc), Vgs(th) (Max) @ Id: 5V @ 500µA, Supplier Device Package: TO-220, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1385 pF @ 25 V.
Weitere Produktangebote APT4F120K nach Preis ab 5.75 EUR bis 5.98 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| APT4F120K | Hersteller : MICROCHIP TECHNOLOGY |
 APT4F120K THT N channel transistors |
auf Bestellung 13 Stücke: Lieferzeit 7-14 Tag (e) |
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APT4F120K | Hersteller : Microchip Technology |
Trans MOSFET N-CH Si 1.2KV 4A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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APT4F120K | Hersteller : Microchip Technology |
Description: MOSFET N-CH 1200V 4A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 4.6Ohm @ 2A, 10V Power Dissipation (Max): 225W (Tc) Vgs(th) (Max) @ Id: 5V @ 500µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1385 pF @ 25 V |
Produkt ist nicht verfügbar |