APT4F120K Microchip Technology
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.59 EUR |
| 100+ | 4.84 EUR |
| 250+ | 4.74 EUR |
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Technische Details APT4F120K Microchip Technology
Description: MOSFET N-CH 1200V 4A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Rds On (Max) @ Id, Vgs: 4.6Ohm @ 2A, 10V, Power Dissipation (Max): 225W (Tc), Vgs(th) (Max) @ Id: 5V @ 500µA, Supplier Device Package: TO-220, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1385 pF @ 25 V.
Weitere Produktangebote APT4F120K
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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APT4F120K | MICROCHIP TECHNOLOGY |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; Idm: 15A; 225W; TO220-3 Mounting: THT Pulsed drain current: 15A Power dissipation: 225W Gate charge: 43nC Polarisation: unipolar Technology: POWER MOS 8® Drain current: 3A Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: tube Case: TO220-3 On-state resistance: 4.2Ω |
auf Bestellung 173 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| APT4F120K |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; Idm: 15A; 225W; TO220-3
Mounting: THT
Pulsed drain current: 15A
Power dissipation: 225W
Gate charge: 43nC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 3A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO220-3
On-state resistance: 4.2Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; Idm: 15A; 225W; TO220-3
Mounting: THT
Pulsed drain current: 15A
Power dissipation: 225W
Gate charge: 43nC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 3A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO220-3
On-state resistance: 4.2Ω
auf Bestellung 173 Stücke:
Lieferzeit 14-21 Tag (e)