APT5010JLLU3 Microchip Technology
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 41A SOT227
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-227
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 378W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 23A, 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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Technische Details APT5010JLLU3 Microchip Technology
Description: MOSFET N-CH 500V 41A SOT227, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Chassis Mount, Package / Case: SOT-227-4, miniBLOC, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: SOT-227, Vgs(th) (Max) @ Id: 5V @ 2.5mA, Power Dissipation (Max): 378W (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 23A, 10V, Current - Continuous Drain (Id) @ 25°C: 41A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide).
Weitere Produktangebote APT5010JLLU3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
|
APT5010JLLU3 | Microchip Technology |
Discrete Semiconductor Modules PM-MOSFET-7-SOT227 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 34 Stücke Im Einkaufswagen Stück im Wert von UAH |
| APT5010JLLU3 |
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Hersteller: Microchip Technology
Discrete Semiconductor Modules PM-MOSFET-7-SOT227
Discrete Semiconductor Modules PM-MOSFET-7-SOT227
Produkt ist nicht verfügbar
Mindestbestellmenge: 34 Stücke
Im Einkaufswagen
Stück im Wert von UAH


