
APT5010JVRU3 Microchip Technology
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Technische Details APT5010JVRU3 Microchip Technology
Description: MOSFET N-CH 500V 44A SOT227, Packaging: Bulk, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 44A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 22A, 10V, Power Dissipation (Max): 450W (Tc), Vgs(th) (Max) @ Id: 4V @ 2.5mA, Supplier Device Package: SOT-227, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 312 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7410 pF @ 25 V.
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Foto | Bezeichnung | Hersteller | Beschreibung |
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APT5010JVRU3 | Hersteller : MICROCHIP TECHNOLOGY |
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APT5010JVRU3 | Hersteller : Microchip Technology |
![]() Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 22A, 10V Power Dissipation (Max): 450W (Tc) Vgs(th) (Max) @ Id: 4V @ 2.5mA Supplier Device Package: SOT-227 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 312 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7410 pF @ 25 V |
Produkt ist nicht verfügbar |
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APT5010JVRU3 | Hersteller : Microchip Technology |
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Produkt ist nicht verfügbar |