APT5014BLLG Microchip Technology


APL501J_D_Linear_MOSFET_Datasheet.pdf
Hersteller: Microchip Technology
MOSFETs MOSFET MOS7 500 V 14 Ohm TO-247
auf Bestellung 520 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+22.55 EUR
100+19.48 EUR
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details APT5014BLLG Microchip Technology

Description: MOSFET N-CH 500V 35A TO247, Part Status: Active, Supplier Device Package: TO-247 [B], Vgs(th) (Max) @ Id: 5V @ 1mA, Power Dissipation (Max): 403W (Tc), Rds On (Max) @ Id, Vgs: 140mOhm @ 17.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 3261 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V.

Weitere Produktangebote APT5014BLLG

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
APT5014BLLG APT5014BLLG Microchip Technology APT5014B_SLL(G)_B.pdf Description: MOSFET N-CH 500V 35A TO247
Part Status: Active
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 403W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 17.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3261 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
APT5014BLLG APT5014B_SLL(G)_B.pdf
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 35A TO247
Part Status: Active
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 403W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 17.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3261 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH