APT5014SLLG Microchip Technology
auf Bestellung 55 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 21.38 EUR |
| 40+ | 18.64 EUR |
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Technische Details APT5014SLLG Microchip Technology
Description: MOSFET N-CH 500V 35A D3PAK, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 140mOhm @ 17.5A, 10V, Power Dissipation (Max): 403W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: D3Pak, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3261 pF @ 25 V.
Weitere Produktangebote APT5014SLLG nach Preis ab 18.64 EUR bis 21.38 EUR
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APT5014SLLG | Hersteller : Microchip Technology |
 Trans MOSFET N-CH 500V 35A 3-Pin(2+Tab) D3PAK Tube |
auf Bestellung 55 Stücke: Lieferzeit 14-21 Tag (e) |
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APT5014SLLG | Hersteller : Microchip Technology |
Description: MOSFET N-CH 500V 35A D3PAK Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 17.5A, 10V Power Dissipation (Max): 403W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: D3Pak Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3261 pF @ 25 V |
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APT5014SLLG | Hersteller : Microchip Technology |
MOSFETs MOSFET MOS7 500 V 14 Ohm TO-268 |
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APT5014SLLG | Hersteller : MICROCHIP TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 35A; Idm: 140A; 403W; D3PAK Type of transistor: N-MOSFET Technology: POWER MOS 7® Mounting: SMD Kind of package: tube Polarisation: unipolar Gate charge: 72nC On-state resistance: 0.14Ω Gate-source voltage: ±30V Drain current: 35A Pulsed drain current: 140A Power dissipation: 403W Case: D3PAK Drain-source voltage: 500V Kind of channel: enhancement |
Produkt ist nicht verfügbar |