APT5020BVRG Microchip Technology
auf Bestellung 484 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 24.18 EUR |
| 100+ | 20.88 EUR |
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Technische Details APT5020BVRG Microchip Technology
Description: MOSFET N-CH 500V 26A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Tc), Rds On (Max) @ Id, Vgs: 200mOhm @ 500mA, 10V, Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-247 [B], Part Status: Active, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4440 pF @ 25 V.
Weitere Produktangebote APT5020BVRG
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APT5020BVRG | Hersteller : Microchip Technology |
 Trans MOSFET N-CH 500V 26A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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APT5020BVRG | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 300W; TO247 Type of transistor: N-MOSFET Technology: POWER MOS V® Polarisation: unipolar Drain-source voltage: 500V Drain current: 26A Power dissipation: 300W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.2Ω Mounting: THT Gate charge: 225nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT5020BVRG | Hersteller : Microchip Technology |
Description: MOSFET N-CH 500V 26A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-247 [B] Part Status: Active Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4440 pF @ 25 V |
Produkt ist nicht verfügbar |
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APT5020BVRG | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 300W; TO247 Type of transistor: N-MOSFET Technology: POWER MOS V® Polarisation: unipolar Drain-source voltage: 500V Drain current: 26A Power dissipation: 300W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.2Ω Mounting: THT Gate charge: 225nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |