Technische Details APT5020SVFRG Microchip Technology
Description: MOSFET N-CH 500V 26A D3PAK, Input Capacitance (Ciss) (Max) @ Vds: 4440 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Supplier Device Package: D3Pak, Vgs(th) (Max) @ Id: 4V @ 1mA, Rds On (Max) @ Id, Vgs: 200mOhm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 26A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Surface Mount, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Packaging: Tube.
Weitere Produktangebote APT5020SVFRG
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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APT5020SVFRG | Microchip Technology |
 Description: MOSFET N-CH 500V 26A D3PAKInput Capacitance (Ciss) (Max) @ Vds: 4440 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Supplier Device Package: D3Pak Vgs(th) (Max) @ Id: 4V @ 1mA Rds On (Max) @ Id, Vgs: 200mOhm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH |
| APT5020SVFRG |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 26A D3PAK
Input Capacitance (Ciss) (Max) @ Vds: 4440 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Supplier Device Package: D3Pak
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 200mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
Description: MOSFET N-CH 500V 26A D3PAK
Input Capacitance (Ciss) (Max) @ Vds: 4440 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Supplier Device Package: D3Pak
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 200mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen
Stück im Wert von UAH