APT5024SLLG

APT5024SLLG MICROCHIP (MICROSEMI)


6316-apt5024bllg-apt5024sllg-datasheet Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; Idm: 88A; 265W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 265W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 43nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
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Technische Details APT5024SLLG MICROCHIP (MICROSEMI)

Description: MOSFET N-CH 500V 22A D3PAK, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 240mOhm @ 11A, 10V, Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: D3Pak, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V.

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APT5024SLLG APT5024SLLG Hersteller : Microchip Technology 6316-apt5024bllg-apt5024sllg-datasheet Description: MOSFET N-CH 500V 22A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: D3Pak
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Produkt ist nicht verfügbar
APT5024SLLG APT5024SLLG Hersteller : Microsemi 6316-apt5024bllg-apt5024sllg-datasheet MOSFET Power MOSFET - MOS7
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APT5024SLLG APT5024SLLG Hersteller : MICROCHIP (MICROSEMI) 6316-apt5024bllg-apt5024sllg-datasheet Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; Idm: 88A; 265W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 265W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 43nC
Kind of channel: enhanced
Produkt ist nicht verfügbar