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APT50GN60BDQ3G

APT50GN60BDQ3G Microchip Technology


122683-apt50gn60bdq3g-apt50gn60sdq3g-datasheet Hersteller: Microchip Technology
Description: IGBT FIELDSTOP COMBI 600V 50A TO
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 50A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/230ns
Switching Energy: 1.185mJ (on), 1.565mJ (off)
Test Condition: 400V, 50A, 4.3Ohm, 15V
Gate Charge: 325 nC
Part Status: Active
Current - Collector (Ic) (Max): 107 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 366 W
auf Bestellung 127 Stücke:

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Technische Details APT50GN60BDQ3G Microchip Technology

Description: IGBT FIELDSTOP COMBI 600V 50A TO, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 35 ns, Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 50A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 20ns/230ns, Switching Energy: 1.185mJ (on), 1.565mJ (off), Test Condition: 400V, 50A, 4.3Ohm, 15V, Gate Charge: 325 nC, Part Status: Active, Current - Collector (Ic) (Max): 107 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 150 A, Power - Max: 366 W.

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APT50GN60BDQ3G APT50GN60BDQ3G Hersteller : Microchip Technology APT50GN60B_SDQ3_G__A-1855403.pdf IGBT Transistors IGBT Fieldstop Low Frequency Combi 600 V 50 A TO-247
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APT50GN60BDQ3G Hersteller : MICROCHIP (MICROSEMI) 122683-apt50gn60bdq3g-apt50gn60sdq3g-datasheet APT50GN60BDQ3G THT IGBT transistors
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3+ 23.84 EUR
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