APT50GT120B2RDLG Microsemi Corporation

Description: IGBT NPT 1200V 106A, Power - Max: 694 W, Current - Collector Pulsed (Icm): 150 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 106 A, Gate Charge: 240 nC, Test Condition: 800V, 50A, 4.7Ohm, 15V, Switching Energy: 3585µJ (on), 1910µJ (off), Td (on/off) @ 25°C: 23ns/215ns, IGBT Type: NPT, Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3 Variant, Packaging: Tube.