APT50M50JFLL Microchip Technology
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 108.84 EUR |
100+ | 93.98 EUR |
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Technische Details APT50M50JFLL Microchip Technology
Category: Transistor modules MOSFET, Description: Module; single transistor; 500V; 71A; ISOTOP; screw; Idm: 284A; 595W, Case: ISOTOP, Semiconductor structure: single transistor, Drain-source voltage: 500V, Drain current: 71A, On-state resistance: 50mΩ, Power dissipation: 595W, Polarisation: unipolar, Kind of package: tube, Electrical mounting: screw, Mechanical mounting: screw, Technology: POWER MOS 7®, Kind of channel: enhancement, Gate-source voltage: ±30V, Pulsed drain current: 284A, Type of semiconductor module: MOSFET transistor, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APT50M50JFLL
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APT50M50JFLL | Hersteller : Microchip Technology |
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APT50M50JFLL | Hersteller : Microchip Technology |
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Produkt ist nicht verfügbar |
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APT50M50JFLL | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 71A; ISOTOP; screw; Idm: 284A; 595W Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 71A On-state resistance: 50mΩ Power dissipation: 595W Polarisation: unipolar Kind of package: tube Electrical mounting: screw Mechanical mounting: screw Technology: POWER MOS 7® Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 284A Type of semiconductor module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
APT50M50JFLL | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 71A; ISOTOP; screw; Idm: 284A; 595W Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 71A On-state resistance: 50mΩ Power dissipation: 595W Polarisation: unipolar Kind of package: tube Electrical mounting: screw Mechanical mounting: screw Technology: POWER MOS 7® Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 284A Type of semiconductor module: MOSFET transistor |
Produkt ist nicht verfügbar |