APT50M75JLLU3 MICROCHIP TECHNOLOGY
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Technische Details APT50M75JLLU3 MICROCHIP TECHNOLOGY
Description: MOSFET N-CH 500V 51A SOT227, Packaging: Bulk, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 51A (Tc), Rds On (Max) @ Id, Vgs: 75mOhm @ 25.5A, 10V, Power Dissipation (Max): 290W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: SOT-227, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5590 pF @ 25 V.
Weitere Produktangebote APT50M75JLLU3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| APT50M75JLLU3 | Hersteller : MICROSEMI |
 SOT227/POWER MODULE - MOSFET APT50M75Anzahl je Verpackung: 1 Stücke |
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APT50M75JLLU3 | Hersteller : Microchip Technology |
Description: MOSFET N-CH 500V 51A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 25.5A, 10V Power Dissipation (Max): 290W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: SOT-227 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5590 pF @ 25 V |
Produkt ist nicht verfügbar |
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| APT50M75JLLU3 | Hersteller : Microchip Technology |
MOSFET Modules PM-MOSFET-7-SOT227 |
Produkt ist nicht verfügbar |