Technische Details APT50M75JLLU3 MICROSEMI
Description: MOSFET N-CH 500V 51A SOT227, Packaging: Bulk, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 51A (Tc), Rds On (Max) @ Id, Vgs: 75mOhm @ 25.5A, 10V, Power Dissipation (Max): 290W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: SOT-227, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5590 pF @ 25 V.
Weitere Produktangebote APT50M75JLLU3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
|
APT50M75JLLU3 | Microchip Technology |
Description: MOSFET N-CH 500V 51A SOT227Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 25.5A, 10V Power Dissipation (Max): 290W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: SOT-227 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5590 pF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 31 Stücke Im Einkaufswagen Stück im Wert von UAH |
| APT50M75JLLU3 | Microchip Technology |
MOSFET Modules PM-MOSFET-7-SOT227 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 31 Stücke Im Einkaufswagen Stück im Wert von UAH |
| APT50M75JLLU3 |
![]() |
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 51A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 25.5A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5590 pF @ 25 V
Description: MOSFET N-CH 500V 51A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 25.5A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5590 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 31 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| APT50M75JLLU3 |
![]() |
Hersteller: Microchip Technology
MOSFET Modules PM-MOSFET-7-SOT227
MOSFET Modules PM-MOSFET-7-SOT227
Produkt ist nicht verfügbar
Mindestbestellmenge: 31 Stücke
Im Einkaufswagen
Stück im Wert von UAH


