APT50M85JVFR Microchip / Microsemi

Discrete Semiconductor Modules FG, FREDFET, 500V, 0.085_OHM, SOT-227
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
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Technische Details APT50M85JVFR Microchip / Microsemi
Category: Transistor modules MOSFET, Description: Module; single transistor; 500V; 50A; ISOTOP; screw; Idm: 200A; 500W, Drain-source voltage: 500V, Drain current: 50A, On-state resistance: 85mΩ, Power dissipation: 500W, Polarisation: unipolar, Case: ISOTOP, Kind of package: tube, Electrical mounting: screw, Mechanical mounting: screw, Technology: POWER MOS 5®, Kind of channel: enhancement, Gate-source voltage: ±30V, Pulsed drain current: 200A, Type of semiconductor module: MOSFET transistor, Semiconductor structure: single transistor, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APT50M85JVFR
Foto | Bezeichnung | Hersteller | Beschreibung |
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APT50M85JVFR | Hersteller : Microchip Technology |
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Produkt ist nicht verfügbar |
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APT50M85JVFR | Hersteller : Microchip Technology |
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Produkt ist nicht verfügbar |
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APT50M85JVFR | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 50A; ISOTOP; screw; Idm: 200A; 500W Drain-source voltage: 500V Drain current: 50A On-state resistance: 85mΩ Power dissipation: 500W Polarisation: unipolar Case: ISOTOP Kind of package: tube Electrical mounting: screw Mechanical mounting: screw Technology: POWER MOS 5® Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 200A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT50M85JVFR | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 50A; ISOTOP; screw; Idm: 200A; 500W Drain-source voltage: 500V Drain current: 50A On-state resistance: 85mΩ Power dissipation: 500W Polarisation: unipolar Case: ISOTOP Kind of package: tube Electrical mounting: screw Mechanical mounting: screw Technology: POWER MOS 5® Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 200A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor |
Produkt ist nicht verfügbar |