Technische Details APT56F50L Microchip Technology
Description: MOSFET N-CH 500V 56A TO264, Package / Case: TO-264-3, TO-264AA, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-264 [L], Vgs(th) (Max) @ Id: 5V @ 2.5mA, Power Dissipation (Max): 780W (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 28A, 10V, Current - Continuous Drain (Id) @ 25°C: 56A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole.
Weitere Produktangebote APT56F50L
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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APT56F50L | Microchip Technology |
Description: MOSFET N-CH 500V 56A TO264Package / Case: TO-264-3, TO-264AA Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-264 [L] Vgs(th) (Max) @ Id: 5V @ 2.5mA Power Dissipation (Max): 780W (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 28A, 10V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH |
| APT56F50L |
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Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 56A TO264
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264 [L]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 780W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 28A, 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Description: MOSFET N-CH 500V 56A TO264
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264 [L]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 780W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 28A, 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen
Stück im Wert von UAH


