Technische Details APT60D100SG Microchip Technology
Description: DIODE GEN PURP 1KV 60A D3, Current - Reverse Leakage @ Vr: 250 µA @ 1000 V, Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A, Voltage - DC Reverse (Vr) (Max): 1000 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: D3Pak, Current - Average Rectified (Io): 60A, Technology: Standard, Reverse Recovery Time (trr): 280 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Packaging: Tube.
Weitere Produktangebote APT60D100SG
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| APT60D100SG | MICROSEMI |
D3PAK/60 A, 1000 V, SILICON, RECTIFIER DIODE APT60D100Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
|
APT60D100SG | Microchip Technology |
Description: DIODE GEN PURP 1KV 60A D3Current - Reverse Leakage @ Vr: 250 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A Voltage - DC Reverse (Vr) (Max): 1000 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: D3Pak Current - Average Rectified (Io): 60A Technology: Standard Reverse Recovery Time (trr): 280 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 90 Stücke Im Einkaufswagen Stück im Wert von UAH |
| APT60D100SG |
![]() |
Hersteller: MICROSEMI
D3PAK/60 A, 1000 V, SILICON, RECTIFIER DIODE APT60D100
Anzahl je Verpackung: 1 Stücke
D3PAK/60 A, 1000 V, SILICON, RECTIFIER DIODE APT60D100
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| APT60D100SG |
![]() |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 1KV 60A D3
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: D3Pak
Current - Average Rectified (Io): 60A
Technology: Standard
Reverse Recovery Time (trr): 280 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
Description: DIODE GEN PURP 1KV 60A D3
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: D3Pak
Current - Average Rectified (Io): 60A
Technology: Standard
Reverse Recovery Time (trr): 280 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 90 Stücke
Im Einkaufswagen
Stück im Wert von UAH



