APT60GA60JD60 Microchip Technology
Hersteller: Microchip TechnologyDescription: IGBT MOD 600V 112A 356W ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 62A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: PT
Current - Collector (Ic) (Max): 112 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 356 W
Current - Collector Cutoff (Max): 275 µA
Input Capacitance (Cies) @ Vce: 8.01 nF @ 25 V
auf Bestellung 1395 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 78.42 EUR |
| 100+ | 63.62 EUR |
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Technische Details APT60GA60JD60 Microchip Technology
Description: IGBT MOD 600V 112A 356W ISOTOP, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -55°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 62A, NTC Thermistor: No, Supplier Device Package: ISOTOP®, IGBT Type: PT, Current - Collector (Ic) (Max): 112 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 356 W, Current - Collector Cutoff (Max): 275 µA, Input Capacitance (Cies) @ Vce: 8.01 nF @ 25 V.
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APT60GA60JD60 | Hersteller : Microchip Technology |
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| APT60GA60JD60 | Hersteller : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 60A; SOT227B Case: SOT227B Pulsed collector current: 178A Collector current: 60A Gate-emitter voltage: ±30V Semiconductor structure: single transistor Technology: POWER MOS 8®; PT Max. off-state voltage: 0.6kV Application: for UPS Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT |
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