APT60GF120JRDQ3 Microchip Technology

Description: IGBT MOD 1200V 149A 625W ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 149 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 625 W
Current - Collector Cutoff (Max): 350 µA
Input Capacitance (Cies) @ Vce: 7.08 nF @ 25 V
auf Bestellung 26 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 178.69 EUR |
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Technische Details APT60GF120JRDQ3 Microchip Technology
Description: IGBT MOD 1200V 149A 625W ISOTOP, Packaging: Tube, Package / Case: ISOTOP, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -55°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A, NTC Thermistor: No, Supplier Device Package: ISOTOP®, IGBT Type: NPT, Part Status: Active, Current - Collector (Ic) (Max): 149 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 625 W, Current - Collector Cutoff (Max): 350 µA, Input Capacitance (Cies) @ Vce: 7.08 nF @ 25 V.
Weitere Produktangebote APT60GF120JRDQ3 nach Preis ab 182.11 EUR bis 198.23 EUR
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APT60GF120JRDQ3 | Hersteller : Microchip Technology |
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auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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APT60GF120JRDQ3 | Hersteller : MICROCHIP TECHNOLOGY |
![]() Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 79A; SOT227B Type of module: IGBT Case: SOT227B Max. off-state voltage: 1.2kV Kind of package: tube Electrical mounting: screw Mechanical mounting: screw Technology: Fast IGBT; FRED; NPT Semiconductor structure: single transistor Gate-emitter voltage: ±30V Collector current: 79A Pulsed collector current: 300A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT60GF120JRDQ3 | Hersteller : Microchip Technology |
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Produkt ist nicht verfügbar |
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APT60GF120JRDQ3 | Hersteller : MICROCHIP TECHNOLOGY |
![]() Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 79A; SOT227B Type of module: IGBT Case: SOT227B Max. off-state voltage: 1.2kV Kind of package: tube Electrical mounting: screw Mechanical mounting: screw Technology: Fast IGBT; FRED; NPT Semiconductor structure: single transistor Gate-emitter voltage: ±30V Collector current: 79A Pulsed collector current: 300A |
Produkt ist nicht verfügbar |