APT60M75L2LLG Microchip Technology
Hersteller: Microchip TechnologyDescription: MOSFET N-CH 600V 73A 264 MAX
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 36.5A, 10V
Power Dissipation (Max): 893W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: 264 MAX™ [L2]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8930 pF @ 25 V
auf Bestellung 210 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 84.83 EUR |
| 100+ | 68.85 EUR |
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Technische Details APT60M75L2LLG Microchip Technology
Description: MOSFET N-CH 600V 73A 264 MAX, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 73A (Tc), Rds On (Max) @ Id, Vgs: 75mOhm @ 36.5A, 10V, Power Dissipation (Max): 893W (Tc), Vgs(th) (Max) @ Id: 5V @ 5mA, Supplier Device Package: 264 MAX™ [L2], Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8930 pF @ 25 V.
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