APT65GP60L2DQ2G Microchip Technology

Description: IGBT PT 600V 198A, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-264-3, TO-264AA, Packaging: Tube, Power - Max: 833 W, Current - Collector Pulsed (Icm): 250 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 198 A, Part Status: Active, Gate Charge: 210 nC, Test Condition: 400V, 65A, 5Ohm, 15V, Switching Energy: 605µJ (on), 895µJ (off), Td (on/off) @ 25°C: 30ns/90ns, IGBT Type: PT, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 65A, Input Type: Standard.