Technische Details APT66M60B2 Microchip / Microsemi
Description: MOSFET N-CH 600V 70A T-MAX, Input Capacitance (Ciss) (Max) @ Vds: 13190 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: T-MAX™ [B2], Vgs(th) (Max) @ Id: 5V @ 2.5mA, Power Dissipation (Max): 1135W (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 33A, 10V, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3 Variant, Packaging: Tube.
Weitere Produktangebote APT66M60B2
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| APT66M60B2 | MICROSEMI |
 T-MAX/N-CHANNEL POWER MOSFET - MOS8 APT66M60Anzahl je Verpackung: 30 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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APT66M60B2 | Microchip Technology |
Description: MOSFET N-CH 600V 70A T-MAX Input Capacitance (Ciss) (Max) @ Vds: 13190 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: T-MAX™ [B2] Vgs(th) (Max) @ Id: 5V @ 2.5mA Power Dissipation (Max): 1135W (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 33A, 10V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 30 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
APT66M60B2 | Microchip Technology |
MOSFET MOSFET MOS8 600 V 66 A TO-247 MAX |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| APT66M60B2 |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 70A T-MAX
Input Capacitance (Ciss) (Max) @ Vds: 13190 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: T-MAX™ [B2]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 1135W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 33A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Description: MOSFET N-CH 600V 70A T-MAX
Input Capacitance (Ciss) (Max) @ Vds: 13190 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: T-MAX™ [B2]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 1135W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 33A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 30 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| APT66M60B2 |
|
Hersteller: Microchip Technology
MOSFET MOSFET MOS8 600 V 66 A TO-247 MAX
MOSFET MOSFET MOS8 600 V 66 A TO-247 MAX
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH