Technische Details APT6M100K Microsemi
Description: MOSFET N-CH 1000V 6A TO220, Rds On (Max) @ Id, Vgs: 2.5Ohm @ 3A, 10V, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Drain to Source Voltage (Vdss): 1000 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220 [K], Vgs(th) (Max) @ Id: 5V @ 1mA, Power Dissipation (Max): 225W (Tc).
Weitere Produktangebote APT6M100K
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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APT6M100K | Microsemi Corporation |
 Description: MOSFET N-CH 1000V 6A TO220Rds On (Max) @ Id, Vgs: 2.5Ohm @ 3A, 10V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Drain to Source Voltage (Vdss): 1000 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220 [K] Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 225W (Tc) |
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 |
APT6M100K | Microchip Technology |
MOSFETs Power MOSFET - MOS8 |
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| APT6M100K |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 1000V 6A TO220
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220 [K]
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 225W (Tc)
Description: MOSFET N-CH 1000V 6A TO220
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220 [K]
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 225W (Tc)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| APT6M100K |
|
Hersteller: Microchip Technology
MOSFETs Power MOSFET - MOS8
MOSFETs Power MOSFET - MOS8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH