APT70GR120L
Produktcode: 130770
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Transistoren > Transistoren IGBT, Leistungsmodule
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Weitere Produktangebote APT70GR120L
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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APT70GR120L | Microchip Technology |
Description: IGBT NPT 1200V 160A TO264Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 70A Supplier Device Package: TO-264 IGBT Type: NPT Td (on/off) @ 25°C: 33ns/278ns Switching Energy: 3.82mJ (on), 2.58mJ (off) Test Condition: 600V, 70A, 4.3Ohm, 15V Gate Charge: 544 nC Current - Collector (Ic) (Max): 160 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 280 A Power - Max: 961 W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 40 Stücke Im Einkaufswagen Stück im Wert von UAH |
| APT70GR120L | Microchip Technology |
IGBTs IGBT MOS 8 1200 V 70 A TO-264 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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APT70GR120L | MICROCHIP TECHNOLOGY |
Category: THT IGBT transistorsDescription: Transistor: IGBT; NPT; 1.2kV; 70A; 961W; TO264 Power dissipation: 961W Gate charge: 412nC Technology: NPT; POWER MOS 8® Pulsed collector current: 280A Type of transistor: IGBT Turn-on time: 81ns Kind of package: tube Case: TO264 Turn-off time: 394ns Gate-emitter voltage: ±30V Collector current: 70A Mounting: THT Collector-emitter voltage: 1.2kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| APT70GR120L |
![]() |
Hersteller: Microchip Technology
Description: IGBT NPT 1200V 160A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 70A
Supplier Device Package: TO-264
IGBT Type: NPT
Td (on/off) @ 25°C: 33ns/278ns
Switching Energy: 3.82mJ (on), 2.58mJ (off)
Test Condition: 600V, 70A, 4.3Ohm, 15V
Gate Charge: 544 nC
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 280 A
Power - Max: 961 W
Description: IGBT NPT 1200V 160A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 70A
Supplier Device Package: TO-264
IGBT Type: NPT
Td (on/off) @ 25°C: 33ns/278ns
Switching Energy: 3.82mJ (on), 2.58mJ (off)
Test Condition: 600V, 70A, 4.3Ohm, 15V
Gate Charge: 544 nC
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 280 A
Power - Max: 961 W
Produkt ist nicht verfügbar
Mindestbestellmenge: 40 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| APT70GR120L |
![]() |
Hersteller: Microchip Technology
IGBTs IGBT MOS 8 1200 V 70 A TO-264
IGBTs IGBT MOS 8 1200 V 70 A TO-264
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| APT70GR120L |
![]() |
Hersteller: MICROCHIP TECHNOLOGY
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 70A; 961W; TO264
Power dissipation: 961W
Gate charge: 412nC
Technology: NPT; POWER MOS 8®
Pulsed collector current: 280A
Type of transistor: IGBT
Turn-on time: 81ns
Kind of package: tube
Case: TO264
Turn-off time: 394ns
Gate-emitter voltage: ±30V
Collector current: 70A
Mounting: THT
Collector-emitter voltage: 1.2kV
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 70A; 961W; TO264
Power dissipation: 961W
Gate charge: 412nC
Technology: NPT; POWER MOS 8®
Pulsed collector current: 280A
Type of transistor: IGBT
Turn-on time: 81ns
Kind of package: tube
Case: TO264
Turn-off time: 394ns
Gate-emitter voltage: ±30V
Collector current: 70A
Mounting: THT
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH

