APT75F50B2 Microchip / Microsemi
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Technische Details APT75F50B2 Microchip / Microsemi
Description: MOSFET N-CH 500V 75A T-MAX, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 75mOhm @ 37A, 10V, Power Dissipation (Max): 1040W (Tc), Vgs(th) (Max) @ Id: 5V @ 2.5mA, Supplier Device Package: T-MAX™ [B2], Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11600 pF @ 25 V.
Weitere Produktangebote APT75F50B2
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| APT75F50B2 | Hersteller : MICROCHIP (MICROSEMI) |
 APT75F50B2 THT N channel transistors |
Produkt ist nicht verfügbar |
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APT75F50B2 | Hersteller : Microchip Technology |
Description: MOSFET N-CH 500V 75A T-MAX Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 37A, 10V Power Dissipation (Max): 1040W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: T-MAX™ [B2] Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11600 pF @ 25 V |
Produkt ist nicht verfügbar |