
APT75F50L Microchip Technology
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Technische Details APT75F50L Microchip Technology
Description: MOSFET N-CH 500V 75A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 75mOhm @ 37A, 10V, Power Dissipation (Max): 1040W (Tc), Vgs(th) (Max) @ Id: 5V @ 2.5mA, Supplier Device Package: TO-264 [L], Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11600 pF @ 25 V.
Weitere Produktangebote APT75F50L
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APT75F50L | Hersteller : MICROCHIP TECHNOLOGY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 47A; Idm: 230A; 1.04kW; TO264 Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 500V Drain current: 47A Pulsed drain current: 230A Power dissipation: 1.04kW Case: TO264 Gate-source voltage: ±30V On-state resistance: 75mΩ Mounting: THT Gate charge: 290nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT75F50L | Hersteller : Microchip Technology |
![]() Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 37A, 10V Power Dissipation (Max): 1040W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: TO-264 [L] Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11600 pF @ 25 V |
Produkt ist nicht verfügbar |
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APT75F50L | Hersteller : Microchip Technology |
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Produkt ist nicht verfügbar |
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![]() |
APT75F50L | Hersteller : MICROCHIP TECHNOLOGY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 47A; Idm: 230A; 1.04kW; TO264 Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 500V Drain current: 47A Pulsed drain current: 230A Power dissipation: 1.04kW Case: TO264 Gate-source voltage: ±30V On-state resistance: 75mΩ Mounting: THT Gate charge: 290nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |