APT7F100B Microchip Technology
| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.72 EUR |
| 100+ | 6.66 EUR |
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Technische Details APT7F100B Microchip Technology
Description: MOSFET N-CH 1000V 7A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Rds On (Max) @ Id, Vgs: 2Ohm @ 4A, 10V, Power Dissipation (Max): 290W (Tc), Vgs(th) (Max) @ Id: 5V @ 500µA, Supplier Device Package: TO-247 [B], Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V.
Weitere Produktangebote APT7F100B
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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APT7F100B | Microchip Technology |
 Description: MOSFET N-CH 1000V 7A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 4A, 10V Power Dissipation (Max): 290W (Tc) Vgs(th) (Max) @ Id: 5V @ 500µA Supplier Device Package: TO-247 [B] Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 120 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
APT7F100B | MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 5A; Idm: 27A; 290W; TO247-3 Mounting: THT Pulsed drain current: 27A Power dissipation: 290W Gate charge: 58nC Polarisation: unipolar Technology: POWER MOS 8® Drain current: 5A Kind of channel: enhancement Drain-source voltage: 1kV Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: tube Case: TO247-3 On-state resistance: 2Ω |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
APT7F100B | Microchip Technology |
Trans MOSFET N-CH Si 1KV 7A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 120 Stücke Im Einkaufswagen Stück im Wert von UAH |
| APT7F100B |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 7A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 4A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 5V @ 500µA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Description: MOSFET N-CH 1000V 7A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 4A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 5V @ 500µA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 120 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| APT7F100B |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 5A; Idm: 27A; 290W; TO247-3
Mounting: THT
Pulsed drain current: 27A
Power dissipation: 290W
Gate charge: 58nC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 5A
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO247-3
On-state resistance: 2Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 5A; Idm: 27A; 290W; TO247-3
Mounting: THT
Pulsed drain current: 27A
Power dissipation: 290W
Gate charge: 58nC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 5A
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO247-3
On-state resistance: 2Ω
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| APT7F100B |
|
Hersteller: Microchip Technology
Trans MOSFET N-CH Si 1KV 7A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH Si 1KV 7A 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 120 Stücke
Im Einkaufswagen
Stück im Wert von UAH