APT7F100B Microchip Technology
auf Bestellung 98 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 7.71 EUR |
| 500+ | 6.67 EUR |
| 1000+ | 6.53 EUR |
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Technische Details APT7F100B Microchip Technology
Description: MOSFET N-CH 1000V 7A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Rds On (Max) @ Id, Vgs: 2Ohm @ 4A, 10V, Power Dissipation (Max): 290W (Tc), Vgs(th) (Max) @ Id: 5V @ 500µA, Supplier Device Package: TO-247 [B], Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V.
Weitere Produktangebote APT7F100B
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| APT7F100B | Hersteller : MICROCHIP TECHNOLOGY |
 APT7F100B THT N channel transistors |
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APT7F100B | Hersteller : Microchip Technology |
Trans MOSFET N-CH Si 1KV 7A 3-Pin(3+Tab) TO-247 Tube |
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APT7F100B | Hersteller : Microchip Technology |
Trans MOSFET N-CH Si 1KV 7A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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APT7F100B | Hersteller : Microchip Technology |
Description: MOSFET N-CH 1000V 7A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 4A, 10V Power Dissipation (Max): 290W (Tc) Vgs(th) (Max) @ Id: 5V @ 500µA Supplier Device Package: TO-247 [B] Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V |
Produkt ist nicht verfügbar |