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Technische Details APT7M120S Microsemi
Description: MOSFET N-CH 1200V 8A D3PAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: D3Pak, Vgs(th) (Max) @ Id: 5V @ 1mA, Power Dissipation (Max): 335W (Tc), Rds On (Max) @ Id, Vgs: 2.1Ohm @ 3A, 10V, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Packaging: Bulk, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): ±30V, Input Capacitance (Ciss) (Max) @ Vds: 2565 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V.
Weitere Produktangebote APT7M120S
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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APT7M120S | Microchip Technology |
 Description: MOSFET N-CH 1200V 8A D3PAKDrive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: D3Pak Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 335W (Tc) Rds On (Max) @ Id, Vgs: 2.1Ohm @ 3A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Packaging: Bulk Drain to Source Voltage (Vdss): 1200 V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2565 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 80 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
APT7M120S | Microchip Technology |
MOSFETs MOSFET MOS 8 1200 V 7 A TO-268 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| APT7M120S |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 1200V 8A D3PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D3Pak
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 335W (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Bulk
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 2565 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Description: MOSFET N-CH 1200V 8A D3PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D3Pak
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 335W (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Bulk
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 2565 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 80 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| APT7M120S |
|
Hersteller: Microchip Technology
MOSFETs MOSFET MOS 8 1200 V 7 A TO-268
MOSFETs MOSFET MOS 8 1200 V 7 A TO-268
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH