APT7M120S Microsemi

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 1.2kV; 5A; Idm: 28A; 335W; D3PAK, Mounting: SMD, Pulsed drain current: 28A, Power dissipation: 335W, Gate charge: 80nC, Polarisation: unipolar, Technology: POWER MOS 8®, Drain current: 5A, Kind of channel: enhanced, Drain-source voltage: 1.2kV, Type of transistor: N-MOSFET, Case: D3PAK, On-state resistance: 2.1Ω, Gate-source voltage: ±30V, Anzahl je Verpackung: 1 Stücke.