Technische Details APT7M120S Microsemi
Description: MOSFET N-CH 1200V 8A D3PAK, Packaging: Bulk, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 2.1Ohm @ 3A, 10V, Power Dissipation (Max): 335W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: D3Pak, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2565 pF @ 25 V.
Weitere Produktangebote APT7M120S
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| APT7M120S | Hersteller : MICROCHIP TECHNOLOGY |
 APT7M120S SMD N channel transistors |
Produkt ist nicht verfügbar |
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APT7M120S | Hersteller : Microchip Technology |
Description: MOSFET N-CH 1200V 8A D3PAK Packaging: Bulk Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 2.1Ohm @ 3A, 10V Power Dissipation (Max): 335W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: D3Pak Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2565 pF @ 25 V |
Produkt ist nicht verfügbar |