APT8020LFLLG MICROCHIP (MICROSEMI)
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 38A; Idm: 152A; 694W; TO264
Case: TO264
Mounting: THT
Power dissipation: 694W
Polarisation: unipolar
Gate charge: 195nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 152A
Drain-source voltage: 800V
Drain current: 38A
On-state resistance: 0.22Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 38A; Idm: 152A; 694W; TO264
Case: TO264
Mounting: THT
Power dissipation: 694W
Polarisation: unipolar
Gate charge: 195nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 152A
Drain-source voltage: 800V
Drain current: 38A
On-state resistance: 0.22Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
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Technische Details APT8020LFLLG MICROCHIP (MICROSEMI)
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 800V; 38A; Idm: 152A; 694W; TO264, Case: TO264, Mounting: THT, Power dissipation: 694W, Polarisation: unipolar, Gate charge: 195nC, Technology: POWER MOS 7®, Kind of channel: enhanced, Gate-source voltage: ±30V, Pulsed drain current: 152A, Drain-source voltage: 800V, Drain current: 38A, On-state resistance: 0.22Ω, Type of transistor: N-MOSFET, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APT8020LFLLG
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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APT8020LFLLG | Hersteller : Microchip Technology | Description: MOSFET N-CH 800V 38A TO264 |
Produkt ist nicht verfügbar |
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APT8020LFLLG | Hersteller : Microchip Technology | MOSFET FG, FREDFET, 800V, TO-264, RoHS |
Produkt ist nicht verfügbar |
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APT8020LFLLG | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 38A; Idm: 152A; 694W; TO264 Case: TO264 Mounting: THT Power dissipation: 694W Polarisation: unipolar Gate charge: 195nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 152A Drain-source voltage: 800V Drain current: 38A On-state resistance: 0.22Ω Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |