APT8030LVFRG Microchip Technology
auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 40.13 EUR |
100+ | 34.67 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details APT8030LVFRG Microchip Technology
Description: MOSFET N-CH 800V 27A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 27A (Tc), Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 10V, Vgs(th) (Max) @ Id: 4V @ 2.5mA, Supplier Device Package: TO-264 [L], Part Status: Active, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 510 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V.
Weitere Produktangebote APT8030LVFRG
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
---|---|---|---|---|---|
![]() |
APT8030LVFRG | Hersteller : Microchip Technology |
![]() |
Produkt ist nicht verfügbar |
|
![]() |
APT8030LVFRG | Hersteller : Microchip Technology |
![]() |
Produkt ist nicht verfügbar |
|
![]() |
APT8030LVFRG | Hersteller : MICROCHIP TECHNOLOGY |
![]() Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 27A; Idm: 108A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 800V Drain current: 27A Pulsed drain current: 108A Power dissipation: 520W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.3Ω Mounting: THT Gate charge: 510nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
|
APT8030LVFRG | Hersteller : Microchip Technology |
![]() Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Supplier Device Package: TO-264 [L] Part Status: Active Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 510 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V |
Produkt ist nicht verfügbar |
|
![]() |
APT8030LVFRG | Hersteller : MICROCHIP TECHNOLOGY |
![]() Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 27A; Idm: 108A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 800V Drain current: 27A Pulsed drain current: 108A Power dissipation: 520W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.3Ω Mounting: THT Gate charge: 510nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |