APT80GA90B Microchip Technology
| Anzahl | Privatkunde |
|---|---|
| 1+ | 17.85 EUR |
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Technische Details APT80GA90B Microchip Technology
Description: IGBT PT 900V 145A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 47A, Supplier Device Package: TO-247 [B], IGBT Type: PT, Td (on/off) @ 25°C: 18ns/149ns, Switching Energy: 1652µJ (on), 1389µJ (off), Test Condition: 600V, 47A, 4.7Ohm, 15V, Gate Charge: 200 nC, Current - Collector (Ic) (Max): 145 A, Voltage - Collector Emitter Breakdown (Max): 900 V, Current - Collector Pulsed (Icm): 239 A, Power - Max: 625 W.
Weitere Produktangebote APT80GA90B nach Preis ab 18.2 EUR bis 18.2 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
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APT80GA90B | Microchip Technology |
 Description: IGBT PT 900V 145A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 47A Supplier Device Package: TO-247 [B] IGBT Type: PT Td (on/off) @ 25°C: 18ns/149ns Switching Energy: 1652µJ (on), 1389µJ (off) Test Condition: 600V, 47A, 4.7Ohm, 15V Gate Charge: 200 nC Current - Collector (Ic) (Max): 145 A Voltage - Collector Emitter Breakdown (Max): 900 V Current - Collector Pulsed (Icm): 239 A Power - Max: 625 W |
auf Bestellung 19 Stücke: Lieferzeit 10-14 Tag (e) |
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APT80GA90B | Microchip / Microsemi |
IGBT Transistors FG, IGBT, 900V, TO-247 |
auf Bestellung 69 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| APT80GA90B |
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Hersteller: Microchip Technology
Description: IGBT PT 900V 145A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 47A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/149ns
Switching Energy: 1652µJ (on), 1389µJ (off)
Test Condition: 600V, 47A, 4.7Ohm, 15V
Gate Charge: 200 nC
Current - Collector (Ic) (Max): 145 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 239 A
Power - Max: 625 W
Description: IGBT PT 900V 145A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 47A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/149ns
Switching Energy: 1652µJ (on), 1389µJ (off)
Test Condition: 600V, 47A, 4.7Ohm, 15V
Gate Charge: 200 nC
Current - Collector (Ic) (Max): 145 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 239 A
Power - Max: 625 W
auf Bestellung 19 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 18.2 EUR |
| APT80GA90B |
|
Hersteller: Microchip / Microsemi
IGBT Transistors FG, IGBT, 900V, TO-247
IGBT Transistors FG, IGBT, 900V, TO-247
auf Bestellung 69 Stücke:
Lieferzeit 10-14 Tag (e)