Technische Details APT80GA90B Microchip Technology
Description: IGBT PT 900V 145A TO247, Power - Max: 625 W, Current - Collector Pulsed (Icm): 239 A, Voltage - Collector Emitter Breakdown (Max): 900 V, Current - Collector (Ic) (Max): 145 A, Gate Charge: 200 nC, Test Condition: 600V, 47A, 4.7Ohm, 15V, Switching Energy: 1652µJ (on), 1389µJ (off), Td (on/off) @ 25°C: 18ns/149ns, IGBT Type: PT, Supplier Device Package: TO-247 [B], Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 47A, Input Type: Standard.
Weitere Produktangebote APT80GA90B nach Preis ab 17.64 EUR bis 17.64 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||
|---|---|---|---|---|---|---|---|
 |
APT80GA90B | Microchip Technology |
 Description: IGBT PT 900V 145A TO247Power - Max: 625 W Current - Collector Pulsed (Icm): 239 A Voltage - Collector Emitter Breakdown (Max): 900 V Current - Collector (Ic) (Max): 145 A Gate Charge: 200 nC Test Condition: 600V, 47A, 4.7Ohm, 15V Switching Energy: 1652µJ (on), 1389µJ (off) Td (on/off) @ 25°C: 18ns/149ns IGBT Type: PT Supplier Device Package: TO-247 [B] Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 47A Input Type: Standard |
auf Bestellung 43 Stücke: Lieferzeit 10-14 Tag (e) |
|
||
 |
APT80GA90B | Microchip / Microsemi |
IGBT Transistors FG, IGBT, 900V, TO-247 |
auf Bestellung 69 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| APT80GA90B |
|
Hersteller: Microchip Technology
Description: IGBT PT 900V 145A TO247
Power - Max: 625 W
Current - Collector Pulsed (Icm): 239 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector (Ic) (Max): 145 A
Gate Charge: 200 nC
Test Condition: 600V, 47A, 4.7Ohm, 15V
Switching Energy: 1652µJ (on), 1389µJ (off)
Td (on/off) @ 25°C: 18ns/149ns
IGBT Type: PT
Supplier Device Package: TO-247 [B]
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 47A
Input Type: Standard
Description: IGBT PT 900V 145A TO247
Power - Max: 625 W
Current - Collector Pulsed (Icm): 239 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector (Ic) (Max): 145 A
Gate Charge: 200 nC
Test Condition: 600V, 47A, 4.7Ohm, 15V
Switching Energy: 1652µJ (on), 1389µJ (off)
Td (on/off) @ 25°C: 18ns/149ns
IGBT Type: PT
Supplier Device Package: TO-247 [B]
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 47A
Input Type: Standard
auf Bestellung 43 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 17.64 EUR |
| APT80GA90B |
|
Hersteller: Microchip / Microsemi
IGBT Transistors FG, IGBT, 900V, TO-247
IGBT Transistors FG, IGBT, 900V, TO-247
auf Bestellung 69 Stücke:
Lieferzeit 10-14 Tag (e)