APT85GR120JD60 Microchip Technology
Hersteller: Microchip TechnologyDescription: IGBT MOD 1200V 116A 543W SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 85A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 116 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 543 W
Current - Collector Cutoff (Max): 1.1 mA
Input Capacitance (Cies) @ Vce: 8.4 nF @ 25 V
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 59.96 EUR |
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Technische Details APT85GR120JD60 Microchip Technology
Description: IGBT MOD 1200V 116A 543W SOT227, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -55°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 85A, NTC Thermistor: No, Supplier Device Package: SOT-227, IGBT Type: NPT, Part Status: Active, Current - Collector (Ic) (Max): 116 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 543 W, Current - Collector Cutoff (Max): 1.1 mA, Input Capacitance (Cies) @ Vce: 8.4 nF @ 25 V.
Weitere Produktangebote APT85GR120JD60 nach Preis ab 58.63 EUR bis 67.88 EUR
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APT85GR120JD60 | Hersteller : Microchip Technology |
IGBTs IGBT MOS 8 1200 V 85 A SOT-227 |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| APT85GR120JD60 | Hersteller : MICROSEMI |
SOT-227/Ultra Fast NPT - IGBT APT85GR120 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 10 Stücke: Lieferzeit 7-21 Tag (e) |
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APT85GR120JD60 | Hersteller : Microchip Technology |
Trans IGBT Module N-CH 1200V |
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APT85GR120JD60 | Hersteller : Microchip Technology |
Trans IGBT Module N-CH 1200V |
Produkt ist nicht verfügbar |
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| APT85GR120JD60 | Hersteller : MICROCHIP TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 85A; SOT227B Max. off-state voltage: 1.2kV Semiconductor structure: single transistor Gate-emitter voltage: ±30V Collector current: 85A Pulsed collector current: 340A Application: for UPS; Inverter; motors Kind of package: tube Electrical mounting: screw Mechanical mounting: screw Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8® Type of semiconductor module: IGBT Case: SOT227B Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT85GR120JD60 | Hersteller : MICROCHIP TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 85A; SOT227B Max. off-state voltage: 1.2kV Semiconductor structure: single transistor Gate-emitter voltage: ±30V Collector current: 85A Pulsed collector current: 340A Application: for UPS; Inverter; motors Kind of package: tube Electrical mounting: screw Mechanical mounting: screw Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8® Type of semiconductor module: IGBT Case: SOT227B |
Produkt ist nicht verfügbar |