APT94N65B2C3G Microchip Technology
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Technische Details APT94N65B2C3G Microchip Technology
Description: MOSFET N-CH 650V 94A T-MAX, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 94A (Tc), Rds On (Max) @ Id, Vgs: 35mOhm @ 47A, 10V, Power Dissipation (Max): 833W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 5.8mA, Supplier Device Package: T-MAX™ [B2], Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 580 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13940 pF @ 25 V.
Weitere Produktangebote APT94N65B2C3G
Foto | Bezeichnung | Hersteller | Beschreibung |
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APT94N65B2C3G | Hersteller : MICROSEMI |
TMAX/POWER MOSFET - COOLMOS APT94N65 Anzahl je Verpackung: 1 Stücke |
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APT94N65B2C3G | Hersteller : Microsemi Corporation |
Description: MOSFET N-CH 650V 94A T-MAX Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 94A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 47A, 10V Power Dissipation (Max): 833W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 5.8mA Supplier Device Package: T-MAX™ [B2] Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 580 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13940 pF @ 25 V |
Produkt ist nicht verfügbar |
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APT94N65B2C3G | Hersteller : Microchip / Microsemi | MOSFET FG, MOSFET, 600V, 47 AMPS, TO-247 T-MAX |
Produkt ist nicht verfügbar |