APT9M100S/TR

APT9M100S/TR Microchip Technology


APT1001RBVR_C.pdf Hersteller: Microchip Technology
Description: MOSFET MOS8 1000 V 9 A TO-268
Packaging: Cut Tape (CT)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 5A, 10V
Power Dissipation (Max): 335W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: D3Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2605 pF @ 25 V
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Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.35 EUR
100+9.8 EUR
Mindestbestellmenge: 2
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Technische Details APT9M100S/TR Microchip Technology

Description: MOSFET MOS8 1000 V 9 A TO-268, Packaging: Tape & Reel (TR), Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 5A, 10V, Power Dissipation (Max): 335W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: D3Pak, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2605 pF @ 25 V.

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APT9M100S/TR APT9M100S/TR Hersteller : Microchip Technology APT1001RBVR_C.pdf Description: MOSFET MOS8 1000 V 9 A TO-268
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 5A, 10V
Power Dissipation (Max): 335W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: D3Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2605 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
APT9M100S/TR Hersteller : Microchip Technology APT1001RBVR_C.pdf MOSFET MOSFET MOS8 1000 V 9 A TO-268
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH