APTC60AM35SCTG Microchip Technology
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Technische Details APTC60AM35SCTG Microchip Technology
Description: MOSFET 2N-CH 600V 72A SP4, Packaging: Bulk, Package / Case: SP4, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 416W, Drain to Source Voltage (Vdss): 600V, Current - Continuous Drain (Id) @ 25°C: 72A, Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V, Rds On (Max) @ Id, Vgs: 35mOhm @ 36A, 10V, Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V, Vgs(th) (Max) @ Id: 3.9V @ 2mA, Supplier Device Package: SP4.
Weitere Produktangebote APTC60AM35SCTG
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| APTC60AM35SCTG | Hersteller : MICROCHIP TECHNOLOGY |
 APTC60AM35SCTG Transistor modules MOSFET |
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APTC60AM35SCTG | Hersteller : Microchip Technology |
Description: MOSFET 2N-CH 600V 72A SP4 Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 416W Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 72A Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V Rds On (Max) @ Id, Vgs: 35mOhm @ 36A, 10V Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V Vgs(th) (Max) @ Id: 3.9V @ 2mA Supplier Device Package: SP4 |
Produkt ist nicht verfügbar |
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| APTC60AM35SCTG | Hersteller : Microsemi |
Discrete Semiconductor Modules Power Module - SiC |
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