APTC60AM42F2G Microchip Technology
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Technische Details APTC60AM42F2G Microchip Technology
Description: MOSFET 2N-CH 600V 66A SP2, Packaging: Tray, Package / Case: SP2, Mounting Type: Chassis Mount, Configuration: 2 N Channel (Phase Leg), Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 416W, Drain to Source Voltage (Vdss): 600V, Current - Continuous Drain (Id) @ 25°C: 66A, Input Capacitance (Ciss) (Max) @ Vds: 14600pF @ 25V, Rds On (Max) @ Id, Vgs: 42mOhm @ 33A, 10V, Gate Charge (Qg) (Max) @ Vgs: 510nC @ 10V, Vgs(th) (Max) @ Id: 5V @ 6mA, Supplier Device Package: SP2.
Weitere Produktangebote APTC60AM42F2G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| APTC60AM42F2G | Hersteller : MICROSEMI |
 SP2 APTC60AM42Anzahl je Verpackung: 1 Stücke |
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| APTC60AM42F2G | Hersteller : Microsemi Corporation |
Description: MOSFET 2N-CH 600V 66A SP2 Packaging: Tray Package / Case: SP2 Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 416W Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 66A Input Capacitance (Ciss) (Max) @ Vds: 14600pF @ 25V Rds On (Max) @ Id, Vgs: 42mOhm @ 33A, 10V Gate Charge (Qg) (Max) @ Vgs: 510nC @ 10V Vgs(th) (Max) @ Id: 5V @ 6mA Supplier Device Package: SP2 |
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