Technische Details APTC60AM42F2G MICROSEMI
Description: MOSFET 2N-CH 600V 66A SP2, Packaging: Tray, Package / Case: SP2, Mounting Type: Chassis Mount, Configuration: 2 N Channel (Phase Leg), Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 416W, Drain to Source Voltage (Vdss): 600V, Current - Continuous Drain (Id) @ 25°C: 66A, Input Capacitance (Ciss) (Max) @ Vds: 14600pF @ 25V, Rds On (Max) @ Id, Vgs: 42mOhm @ 33A, 10V, Gate Charge (Qg) (Max) @ Vgs: 510nC @ 10V, Vgs(th) (Max) @ Id: 5V @ 6mA, Supplier Device Package: SP2.
Weitere Produktangebote APTC60AM42F2G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| APTC60AM42F2G | Microsemi Corporation |
Description: MOSFET 2N-CH 600V 66A SP2Packaging: Tray Package / Case: SP2 Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 416W Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 66A Input Capacitance (Ciss) (Max) @ Vds: 14600pF @ 25V Rds On (Max) @ Id, Vgs: 42mOhm @ 33A, 10V Gate Charge (Qg) (Max) @ Vgs: 510nC @ 10V Vgs(th) (Max) @ Id: 5V @ 6mA Supplier Device Package: SP2 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH |
| APTC60AM42F2G |
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Hersteller: Microsemi Corporation
Description: MOSFET 2N-CH 600V 66A SP2
Packaging: Tray
Package / Case: SP2
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 416W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 66A
Input Capacitance (Ciss) (Max) @ Vds: 14600pF @ 25V
Rds On (Max) @ Id, Vgs: 42mOhm @ 33A, 10V
Gate Charge (Qg) (Max) @ Vgs: 510nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 6mA
Supplier Device Package: SP2
Description: MOSFET 2N-CH 600V 66A SP2
Packaging: Tray
Package / Case: SP2
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 416W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 66A
Input Capacitance (Ciss) (Max) @ Vds: 14600pF @ 25V
Rds On (Max) @ Id, Vgs: 42mOhm @ 33A, 10V
Gate Charge (Qg) (Max) @ Vgs: 510nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 6mA
Supplier Device Package: SP2
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH

