APTC60AM45T1G Microchip Technology
Hersteller: Microchip TechnologyDescription: MOSFET 2N-CH 600V 49A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 49A
Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Supplier Device Package: SP1
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Technische Details APTC60AM45T1G Microchip Technology
Description: MOSFET 2N-CH 600V 49A SP1, Packaging: Bulk, Package / Case: SP1, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 250W, Drain to Source Voltage (Vdss): 600V, Current - Continuous Drain (Id) @ 25°C: 49A, Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V, Rds On (Max) @ Id, Vgs: 45mOhm @ 24.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V, Vgs(th) (Max) @ Id: 3.9V @ 3mA, Supplier Device Package: SP1.
Weitere Produktangebote APTC60AM45T1G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| APTC60AM45T1G | Hersteller : Microchip Technology |
MOSFET Modules PM-MOSFET-COOLMOS-SP1 |
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| APTC60AM45T1G | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 600V; 38A; SP1; Press-in PCB; 250W Gate-source voltage: ±20V Drain current: 38A Pulsed drain current: 130A Power dissipation: 250W Drain-source voltage: 600V On-state resistance: 45mΩ Topology: MOSFET half-bridge; NTC thermistor Technology: CoolMOS™ Semiconductor structure: transistor/transistor Type of semiconductor module: MOSFET transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Case: SP1 |
Produkt ist nicht verfügbar |