APTC60DSKM24T3G Microchip Technology
Hersteller: Microchip TechnologyDescription: MOSFET 2N-CH 600V 95A SP3
Packaging: Tray
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Dual Buck Chopper)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 462W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 95A
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
Rds On (Max) @ Id, Vgs: 24mOhm @ 47.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 5mA
Supplier Device Package: SP3
Part Status: Active
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 147.89 EUR |
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Technische Details APTC60DSKM24T3G Microchip Technology
Description: MOSFET 2N-CH 600V 95A SP3, Packaging: Tray, Package / Case: SP3, Mounting Type: Chassis Mount, Configuration: 2 N Channel (Dual Buck Chopper), Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 462W, Drain to Source Voltage (Vdss): 600V, Current - Continuous Drain (Id) @ 25°C: 95A, Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V, Rds On (Max) @ Id, Vgs: 24mOhm @ 47.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V, Vgs(th) (Max) @ Id: 3.9V @ 5mA, Supplier Device Package: SP3, Part Status: Active.
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Category: Transistor modules MOSFET Description: Module; diode/transistor; 600V; 70A; SP3F; Press-in PCB; Idm: 260A Mechanical mounting: screw Case: SP3F On-state resistance: 24mΩ Gate-source voltage: ±20V Drain current: 70A Pulsed drain current: 260A Power dissipation: 462W Topology: boost chopper x2; NTC thermistor Drain-source voltage: 600V Technology: SJ-MOSFET Semiconductor structure: diode/transistor Type of semiconductor module: MOSFET transistor Electrical mounting: Press-in PCB |
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