APTC60DSKM35T3G Microsemi Corporation
Hersteller: Microsemi Corporation
Description: MOSFET 2N-CH 600V 72A SP3
Package / Case: SP3
Packaging: Bulk
Part Status: Obsolete
Supplier Device Package: SP3
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 72A
Drain to Source Voltage (Vdss): 600V
Power - Max: 416W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Chassis Mount
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Technische Details APTC60DSKM35T3G Microsemi Corporation
Description: MOSFET 2N-CH 600V 72A SP3, Package / Case: SP3, Packaging: Bulk, Part Status: Obsolete, Supplier Device Package: SP3, Vgs(th) (Max) @ Id: 3.9V @ 5.4mA, Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V, Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 72A, Drain to Source Voltage (Vdss): 600V, Power - Max: 416W, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Chassis Mount.