APTC60VDAM45T1G MICROCHIP TECHNOLOGY
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Technische Details APTC60VDAM45T1G MICROCHIP TECHNOLOGY
Description: MOSFET 2N-CH 600V 49A SP1, Packaging: Tray, Package / Case: SP1, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 250W, Drain to Source Voltage (Vdss): 600V, Current - Continuous Drain (Id) @ 25°C: 49A, Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V, Rds On (Max) @ Id, Vgs: 45mOhm @ 24.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V, Vgs(th) (Max) @ Id: 3.9V @ 3mA, Supplier Device Package: SP1.
Weitere Produktangebote APTC60VDAM45T1G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| APTC60VDAM45T1G | Hersteller : MICROSEMI |
 SP1/49 A, 600 V, 0.045 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET APTC60VDAM45Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APTC60VDAM45T1G | Hersteller : Microchip Technology |
Description: MOSFET 2N-CH 600V 49A SP1 Packaging: Tray Package / Case: SP1 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250W Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 49A Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V Rds On (Max) @ Id, Vgs: 45mOhm @ 24.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Vgs(th) (Max) @ Id: 3.9V @ 3mA Supplier Device Package: SP1 |
Produkt ist nicht verfügbar |
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| APTC60VDAM45T1G | Hersteller : Microchip Technology |
MOSFET Modules PM-MOSFET-COOLMOS-SP1 |
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