APTCV60HM45RCT3G Microsemi Power Products Group
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Technische Details APTCV60HM45RCT3G Microsemi Power Products Group
Category: Transistor modules MOSFET, Description: Module; SiC diode/transistor; 600V; 38A; SP3F; Press-in PCB; 250W, Case: SP3F, Semiconductor structure: SiC diode/transistor, Type of semiconductor module: MOSFET / IGBT transistor, Mechanical mounting: screw, On-state resistance: 45mΩ, Power dissipation: 250W, Gate-source voltage: ±20V, Drain current: 38A, Collector current: 50A, Pulsed drain current: 130A, Drain-source voltage: 600V, Topology: H-bridge; NTC thermistor; single-phase diode bridge, Technology: CoolMOS™; Field Stop; SiC; Trench, Electrical mounting: Press-in PCB, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APTCV60HM45RCT3G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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APTCV60HM45RCT3G | Hersteller : Microchip Technology |
 Power Module 20-Pin Case SP-3 Tube |
Produkt ist nicht verfügbar |
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| APTCV60HM45RCT3G | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 600V; 38A; SP3F; Press-in PCB; 250W Case: SP3F Semiconductor structure: SiC diode/transistor Type of semiconductor module: MOSFET / IGBT transistor Mechanical mounting: screw On-state resistance: 45mΩ Power dissipation: 250W Gate-source voltage: ±20V Drain current: 38A Collector current: 50A Pulsed drain current: 130A Drain-source voltage: 600V Topology: H-bridge; NTC thermistor; single-phase diode bridge Technology: CoolMOS™; Field Stop; SiC; Trench Electrical mounting: Press-in PCB Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APTCV60HM45RCT3G | Hersteller : Microchip / Microsemi |
Discrete Semiconductor Modules DOR CC3153 |
Produkt ist nicht verfügbar |
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| APTCV60HM45RCT3G | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 600V; 38A; SP3F; Press-in PCB; 250W Case: SP3F Semiconductor structure: SiC diode/transistor Type of semiconductor module: MOSFET / IGBT transistor Mechanical mounting: screw On-state resistance: 45mΩ Power dissipation: 250W Gate-source voltage: ±20V Drain current: 38A Collector current: 50A Pulsed drain current: 130A Drain-source voltage: 600V Topology: H-bridge; NTC thermistor; single-phase diode bridge Technology: CoolMOS™; Field Stop; SiC; Trench Electrical mounting: Press-in PCB |
Produkt ist nicht verfügbar |