APTCV60TLM99T3G Microchip Technology
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Technische Details APTCV60TLM99T3G Microchip Technology
Category: Transistor modules MOSFET, Description: Module; diode/transistor; 600V; 17A; SP3; Press-in PCB; Idm: 75A, Drain-source voltage: 600V, Drain current: 17A, Power dissipation: 110W, Case: SP3, On-state resistance: 99mΩ, Type of semiconductor module: MOSFET / IGBT transistor, Collector current: 30A, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Technology: Field Stop; SJ-MOSFET; Trench, Gate-source voltage: ±20V, Topology: NTC thermistor; three-level inverter; single-phase, Pulsed drain current: 75A, Semiconductor structure: diode/transistor, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APTCV60TLM99T3G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| APTCV60TLM99T3G | Hersteller : MICROCHIP TECHNOLOGY |
 Category: Transistor modules MOSFETDescription: Module; diode/transistor; 600V; 17A; SP3; Press-in PCB; Idm: 75A Drain-source voltage: 600V Drain current: 17A Power dissipation: 110W Case: SP3 On-state resistance: 99mΩ Type of semiconductor module: MOSFET / IGBT transistor Collector current: 30A Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: Field Stop; SJ-MOSFET; Trench Gate-source voltage: ±20V Topology: NTC thermistor; three-level inverter; single-phase Pulsed drain current: 75A Semiconductor structure: diode/transistor Anzahl je Verpackung: 1 Stücke |
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APTCV60TLM99T3G | Hersteller : Microchip Technology |
Description: IGBT MODULE 600V 50A 90W SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Input: Standard Configuration: Three Level Inverter - IGBT, FET Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A NTC Thermistor: Yes Supplier Device Package: SP3 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 90 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 1.6 nF @ 25 V |
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APTCV60TLM99T3G | Hersteller : Microchip Technology |
MOSFET Modules PM-MOSFET-COOLMOS-SP3 |
Produkt ist nicht verfügbar |
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| APTCV60TLM99T3G | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 600V; 17A; SP3; Press-in PCB; Idm: 75A Drain-source voltage: 600V Drain current: 17A Power dissipation: 110W Case: SP3 On-state resistance: 99mΩ Type of semiconductor module: MOSFET / IGBT transistor Collector current: 30A Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: Field Stop; SJ-MOSFET; Trench Gate-source voltage: ±20V Topology: NTC thermistor; three-level inverter; single-phase Pulsed drain current: 75A Semiconductor structure: diode/transistor |
Produkt ist nicht verfügbar |