APTDF200A120D16AG Microchip Technology

Description: DIODE MODULE GEN PURP 1200V 410A, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 385 ns, Technology: Standard, Diode Configuration: 1 Pair Series Connection, Current - Average Rectified (Io) (per Diode): 410A, Operating Temperature - Junction: -40°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 200 A, Current - Reverse Leakage @ Vr: 200 µA @ 1200 V.