Technische Details APTDF200A120D16AG Microchip Technology
Description: PM-DIODE-FRED-D-D1, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 385 ns, Technology: Standard, Diode Configuration: 1 Pair Series Connection, Current - Average Rectified (Io) (per Diode): 410A, Operating Temperature - Junction: -40°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 200 A, Current - Reverse Leakage @ Vr: 200 µA @ 1200 V.
Weitere Produktangebote APTDF200A120D16AG
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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APTDF200A120D16AG | Microchip Technology |
 Description: PM-DIODE-FRED-D-D1Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 385 ns Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 410A Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 200 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V |
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Im Einkaufswagen Stück im Wert von UAH |
| APTDF200A120D16AG |
|
Hersteller: Microchip Technology
Description: PM-DIODE-FRED-D-D1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 385 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 410A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 200 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Description: PM-DIODE-FRED-D-D1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 385 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 410A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 200 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH