
APTGL120TDU120TPG Microchip Technology
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Technische Details APTGL120TDU120TPG Microchip Technology
Description: IGBT MODULE 1200V 140A 517W SP6P, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Triple, Dual - Common Source, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 100A, NTC Thermistor: Yes, Supplier Device Package: SP6-P, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 140 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 517 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V.
Weitere Produktangebote APTGL120TDU120TPG
Foto | Bezeichnung | Hersteller | Beschreibung |
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APTGL120TDU120TPG | Hersteller : MICROCHIP TECHNOLOGY |
![]() Description: Module: IGBT; transistor/transistor,common emitter; IGBT x6 Case: SP6P Max. off-state voltage: 1.2kV Semiconductor structure: common emitter; transistor/transistor Pulsed collector current: 200A Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: Field Stop; Trench Topology: IGBT x6; NTC thermistor Type of semiconductor module: IGBT Gate-emitter voltage: ±20V Collector current: 120A Anzahl je Verpackung: 4 Stücke |
Produkt ist nicht verfügbar |
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APTGL120TDU120TPG | Hersteller : Microchip Technology |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Triple, Dual - Common Source Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 100A NTC Thermistor: Yes Supplier Device Package: SP6-P IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 140 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 517 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V |
Produkt ist nicht verfügbar |
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APTGL120TDU120TPG | Hersteller : Microchip Technology |
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Produkt ist nicht verfügbar |
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APTGL120TDU120TPG | Hersteller : MICROCHIP TECHNOLOGY |
![]() Description: Module: IGBT; transistor/transistor,common emitter; IGBT x6 Case: SP6P Max. off-state voltage: 1.2kV Semiconductor structure: common emitter; transistor/transistor Pulsed collector current: 200A Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: Field Stop; Trench Topology: IGBT x6; NTC thermistor Type of semiconductor module: IGBT Gate-emitter voltage: ±20V Collector current: 120A |
Produkt ist nicht verfügbar |