APTGL240TL120G Microchip Technology
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Technische Details APTGL240TL120G Microchip Technology
Description: IGBT MODULE 1200V 305A 1000W SP6, Packaging: Bulk, Package / Case: SP6, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Level Inverter, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 200A, NTC Thermistor: No, Supplier Device Package: SP6, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 305 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 1000 W, Current - Collector Cutoff (Max): 2 mA, Input Capacitance (Cies) @ Vce: 12.3 nF @ 25 V.
Weitere Produktangebote APTGL240TL120G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| APTGL240TL120G | Hersteller : MICROCHIP TECHNOLOGY |
 Category: IGBT modulesDescription: Module: IGBT; diode/transistor; Urmax: 1.2kV; Ic: 240A; SP6C; screw Case: SP6C Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Type of semiconductor module: IGBT Gate-emitter voltage: ±20V Collector current: 240A Pulsed collector current: 400A Application: photovoltaics Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: Field Stop; Trench Topology: three-level inverter; single-phase Anzahl je Verpackung: 4 Stücke |
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APTGL240TL120G | Hersteller : Microchip Technology |
Description: IGBT MODULE 1200V 305A 1000W SP6 Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Input: Standard Configuration: Three Level Inverter Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 200A NTC Thermistor: No Supplier Device Package: SP6 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 305 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1000 W Current - Collector Cutoff (Max): 2 mA Input Capacitance (Cies) @ Vce: 12.3 nF @ 25 V |
Produkt ist nicht verfügbar |
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| APTGL240TL120G | Hersteller : Microchip Technology |
IGBT Modules PM-IGBT-TFS-SP6C |
Produkt ist nicht verfügbar |
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| APTGL240TL120G | Hersteller : MICROCHIP TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; diode/transistor; Urmax: 1.2kV; Ic: 240A; SP6C; screw Case: SP6C Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Type of semiconductor module: IGBT Gate-emitter voltage: ±20V Collector current: 240A Pulsed collector current: 400A Application: photovoltaics Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: Field Stop; Trench Topology: three-level inverter; single-phase |
Produkt ist nicht verfügbar |