APTGL90A120T1G Microchip Technology

Description: IGBT MODULE 1200V 110A 385W SP1, Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V, Current - Collector Cutoff (Max): 250 µA, Power - Max: 385 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 110 A, IGBT Type: Trench Field Stop, Supplier Device Package: SP1, NTC Thermistor: Yes, Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 75A, Operating Temperature: -40°C ~ 175°C (TJ), Configuration: Half Bridge, Input: Standard, Mounting Type: Through Hole, Package / Case: SP1, Packaging: Bulk.