APTGLQ200H120G Microchip Technology

Description: IGBT MODULE 1200V 350A 1000W SP6, Input Capacitance (Cies) @ Vce: 12.3 nF @ 25 V, Current - Collector Cutoff (Max): 100 µA, Power - Max: 1000 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 350 A, IGBT Type: Trench Field Stop, Supplier Device Package: SP6, NTC Thermistor: No, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 200A, Operating Temperature: -40°C ~ 175°C (TJ), Configuration: Full Bridge, Input: Standard, Mounting Type: Chassis Mount, Package / Case: SP6, Packaging: Bulk.