auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 109.6 EUR |
| 100+ | 95 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details APTGLQ25H120T1G Microchip Technology
Description: IGBT MODULE 1200V 50A 165W SP1, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Full Bridge, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.42V @ 15V, 25A, NTC Thermistor: Yes, Supplier Device Package: SP1, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 165 W, Current - Collector Cutoff (Max): 50 µA, Input Capacitance (Cies) @ Vce: 1.43 nF @ 25 V.
Weitere Produktangebote APTGLQ25H120T1G nach Preis ab 110.33 EUR bis 110.33 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||
|---|---|---|---|---|---|---|---|---|---|
| APTGLQ25H120T1G | Hersteller : Microchip Technology |
 Description: IGBT MODULE 1200V 50A 165W SP1Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.42V @ 15V, 25A NTC Thermistor: Yes Supplier Device Package: SP1 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 165 W Current - Collector Cutoff (Max): 50 µA Input Capacitance (Cies) @ Vce: 1.43 nF @ 25 V |
auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||
 |
APTGLQ25H120T1G | Hersteller : Microchip Technology |
Full - Bridge High speed Trench + Field Stop IGBT4 Power Module |
Produkt ist nicht verfügbar |
|||||
 |
APTGLQ25H120T1G | Hersteller : Microchip Technology |
Full - Bridge High speed Trench + Field Stop IGBT4 Power Module |
Produkt ist nicht verfügbar |
|||||
| APTGLQ25H120T1G | Hersteller : MICROCHIP TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; SP1 Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: H-bridge Max. off-state voltage: 1.2kV Collector current: 25A Case: SP1 Electrical mounting: Press-in PCB Technology: Field Stop; Trench Mechanical mounting: screw |
Produkt ist nicht verfügbar |