APTGLQ300H65G Microchip Technology
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Technische Details APTGLQ300H65G Microchip Technology
Description: IGBT MODULE 650V 600A 1000W SP6, Packaging: Bulk, Package / Case: SP6, Mounting Type: Through Hole, Input: Standard, Configuration: Full Bridge, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 300A, NTC Thermistor: No, Supplier Device Package: SP6, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 600 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 1000 W, Current - Collector Cutoff (Max): 300 µA, Input Capacitance (Cies) @ Vce: 18.3 nF @ 25 V.
Weitere Produktangebote APTGLQ300H65G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| APTGLQ300H65G | Hersteller : MICROCHIP (MICROSEMI) |
 Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; H-bridge; Urmax: 650V; SP6C Topology: H-bridge Technology: Field Stop; Trench Case: SP6C Application: motors Collector current: 300A Pulsed collector current: 750A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Max. off-state voltage: 650V Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Anzahl je Verpackung: 4 Stücke |
Produkt ist nicht verfügbar |
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| APTGLQ300H65G | Hersteller : Microchip Technology |
Description: IGBT MODULE 650V 600A 1000W SP6 Packaging: Bulk Package / Case: SP6 Mounting Type: Through Hole Input: Standard Configuration: Full Bridge Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 300A NTC Thermistor: No Supplier Device Package: SP6 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 600 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 1000 W Current - Collector Cutoff (Max): 300 µA Input Capacitance (Cies) @ Vce: 18.3 nF @ 25 V |
Produkt ist nicht verfügbar |
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| APTGLQ300H65G | Hersteller : Microsemi |
IGBT Modules Power Module - IGBT |
Produkt ist nicht verfügbar |
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| APTGLQ300H65G | Hersteller : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 650V; SP6C Topology: H-bridge Technology: Field Stop; Trench Case: SP6C Application: motors Collector current: 300A Pulsed collector current: 750A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Max. off-state voltage: 650V Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT |
Produkt ist nicht verfügbar |