APTGLQ40HR120CT3G MICROCHIP (MICROSEMI)
Hersteller: MICROCHIP (MICROSEMI)Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; Urmax: 1.2kV
Topology: 3-level inverter TNPC
Technology: Field Stop; Trench
Case: SP3F
Application: photovoltaics
Collector current: 40A
Pulsed collector current: 160A
Gate-emitter voltage: ±20V
Semiconductor structure: common emitter; transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 14 Stücke
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Technische Details APTGLQ40HR120CT3G MICROCHIP (MICROSEMI)
Category: IGBT modules, Description: Module: IGBT; transistor/transistor,common emitter; Urmax: 1.2kV, Topology: 3-level inverter TNPC, Technology: Field Stop; Trench, Case: SP3F, Application: photovoltaics, Collector current: 40A, Pulsed collector current: 160A, Gate-emitter voltage: ±20V, Semiconductor structure: common emitter; transistor/transistor, Max. off-state voltage: 1.2kV, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Type of module: IGBT, Anzahl je Verpackung: 14 Stücke.
Weitere Produktangebote APTGLQ40HR120CT3G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| APTGLQ40HR120CT3G | Hersteller : Microchip Technology |
Description: IGBT MODULE 1200V 75A 250W SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Through Hole Input: Standard Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A NTC Thermistor: Yes Supplier Device Package: SP3 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 250 W Current - Collector Cutoff (Max): 100 µA Input Capacitance (Cies) @ Vce: 2.3 nF @ 25 V |
Produkt ist nicht verfügbar |
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| APTGLQ40HR120CT3G | Hersteller : Microchip Technology |
IGBT Modules DOR CC3166 |
Produkt ist nicht verfügbar |
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| APTGLQ40HR120CT3G | Hersteller : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common emitter; Urmax: 1.2kV Topology: 3-level inverter TNPC Technology: Field Stop; Trench Case: SP3F Application: photovoltaics Collector current: 40A Pulsed collector current: 160A Gate-emitter voltage: ±20V Semiconductor structure: common emitter; transistor/transistor Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT |
Produkt ist nicht verfügbar |