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APTGLQ40HR120CT3G MICROCHIP TECHNOLOGY


125280-aptglq40hr120ct3g-datasheet Hersteller: MICROCHIP TECHNOLOGY
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; Urmax: 1.2kV
Max. off-state voltage: 1.2kV
Semiconductor structure: common emitter; transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: 3-level inverter TNPC
Application: photovoltaics
Case: SP3F
Anzahl je Verpackung: 14 Stücke
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Technische Details APTGLQ40HR120CT3G MICROCHIP TECHNOLOGY

Category: IGBT modules, Description: Module: IGBT; transistor/transistor,common emitter; Urmax: 1.2kV, Max. off-state voltage: 1.2kV, Semiconductor structure: common emitter; transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 40A, Pulsed collector current: 160A, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Type of module: IGBT, Technology: Field Stop; Trench, Topology: 3-level inverter TNPC, Application: photovoltaics, Case: SP3F, Anzahl je Verpackung: 14 Stücke.

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APTGLQ40HR120CT3G Hersteller : Microchip Technology 125280-aptglq40hr120ct3g-datasheet Description: IGBT MODULE 1200V 75A 250W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Through Hole
Input: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 2.3 nF @ 25 V
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APTGLQ40HR120CT3G Hersteller : Microchip Technology 125280-aptglq40hr120ct3g-datasheet IGBT Modules DOR CC3166
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APTGLQ40HR120CT3G Hersteller : MICROCHIP TECHNOLOGY 125280-aptglq40hr120ct3g-datasheet Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; Urmax: 1.2kV
Max. off-state voltage: 1.2kV
Semiconductor structure: common emitter; transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: 3-level inverter TNPC
Application: photovoltaics
Case: SP3F
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH