APTGLQ40HR120CT3G MICROCHIP TECHNOLOGY
Hersteller: MICROCHIP TECHNOLOGYCategory: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; Urmax: 1.2kV
Max. off-state voltage: 1.2kV
Semiconductor structure: common emitter; transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: 3-level inverter TNPC
Application: photovoltaics
Case: SP3F
Anzahl je Verpackung: 14 Stücke
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Technische Details APTGLQ40HR120CT3G MICROCHIP TECHNOLOGY
Category: IGBT modules, Description: Module: IGBT; transistor/transistor,common emitter; Urmax: 1.2kV, Max. off-state voltage: 1.2kV, Semiconductor structure: common emitter; transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 40A, Pulsed collector current: 160A, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Type of module: IGBT, Technology: Field Stop; Trench, Topology: 3-level inverter TNPC, Application: photovoltaics, Case: SP3F, Anzahl je Verpackung: 14 Stücke.
Weitere Produktangebote APTGLQ40HR120CT3G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis |
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| APTGLQ40HR120CT3G | Hersteller : Microchip Technology |
Description: IGBT MODULE 1200V 75A 250W SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Through Hole Input: Standard Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A NTC Thermistor: Yes Supplier Device Package: SP3 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 250 W Current - Collector Cutoff (Max): 100 µA Input Capacitance (Cies) @ Vce: 2.3 nF @ 25 V |
Produkt ist nicht verfügbar |
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| APTGLQ40HR120CT3G | Hersteller : Microchip Technology |
IGBT Modules DOR CC3166 |
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| APTGLQ40HR120CT3G | Hersteller : MICROCHIP TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common emitter; Urmax: 1.2kV Max. off-state voltage: 1.2kV Semiconductor structure: common emitter; transistor/transistor Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 160A Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: 3-level inverter TNPC Application: photovoltaics Case: SP3F |
Produkt ist nicht verfügbar |