Technische Details APTGT100A170TG Microsemi
Description: IGBT MODULE 1700V 150A 560W SP4, Packaging: Bulk, Package / Case: SP4, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 100A, NTC Thermistor: Yes, Supplier Device Package: SP4, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 150 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Power - Max: 560 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 9 nF @ 25 V.
Weitere Produktangebote APTGT100A170TG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
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APTGT100A170TG | Hersteller : Microchip Technology |
 Trans IGBT Module N-CH 1700V 150A 560mW 20-Pin Case SP-4 Tube |
Produkt ist nicht verfügbar |
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| APTGT100A170TG | Hersteller : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A Mechanical mounting: screw Technology: Field Stop; Trench Pulsed collector current: 200A Application: motors Max. off-state voltage: 1.7kV Electrical mounting: FASTON connectors; soldering Type of module: IGBT Semiconductor structure: transistor/transistor Case: SP4 Gate-emitter voltage: ±20V Collector current: 100A Topology: IGBT half-bridge; NTC thermistor Anzahl je Verpackung: 8 Stücke |
Produkt ist nicht verfügbar |
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| APTGT100A170TG | Hersteller : MICROSEMI |
SP4/POWER MODULE - IGBT APTGT100 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTGT100A170TG | Hersteller : Microchip Technology |
Description: IGBT MODULE 1700V 150A 560W SP4 Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 100A NTC Thermistor: Yes Supplier Device Package: SP4 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 560 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 9 nF @ 25 V |
Produkt ist nicht verfügbar |
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| APTGT100A170TG | Hersteller : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A Mechanical mounting: screw Technology: Field Stop; Trench Pulsed collector current: 200A Application: motors Max. off-state voltage: 1.7kV Electrical mounting: FASTON connectors; soldering Type of module: IGBT Semiconductor structure: transistor/transistor Case: SP4 Gate-emitter voltage: ±20V Collector current: 100A Topology: IGBT half-bridge; NTC thermistor |
Produkt ist nicht verfügbar |