APTGT100DH60TG MICROCHIP (MICROSEMI)
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 600V
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: asymmetrical bridge; NTC thermistor
Max. off-state voltage: 0.6kV
Collector current: 100A
Case: SP4
Electrical mounting: FASTON connectors; soldering
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Field Stop; Trench
Mechanical mounting: screw
Anzahl je Verpackung: 12 Stücke
Category: IGBT modules
Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 600V
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: asymmetrical bridge; NTC thermistor
Max. off-state voltage: 0.6kV
Collector current: 100A
Case: SP4
Electrical mounting: FASTON connectors; soldering
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Field Stop; Trench
Mechanical mounting: screw
Anzahl je Verpackung: 12 Stücke
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Technische Details APTGT100DH60TG MICROCHIP (MICROSEMI)
Description: IGBT MODULE 600V 150A 340W SP4, Packaging: Bulk, Package / Case: SP4, Mounting Type: Chassis Mount, Input: Standard, Configuration: Asymmetrical Bridge, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A, NTC Thermistor: Yes, Supplier Device Package: SP4, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 150 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 340 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 6.1 nF @ 25 V.
Weitere Produktangebote APTGT100DH60TG
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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APTGT100DH60TG | Hersteller : Microchip Technology | Trans IGBT Module N-CH 600V 150A 340000mW 20-Pin Case SP-4 Tube |
Produkt ist nicht verfügbar |
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APTGT100DH60TG | Hersteller : Microchip Technology |
Description: IGBT MODULE 600V 150A 340W SP4 Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Input: Standard Configuration: Asymmetrical Bridge Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A NTC Thermistor: Yes Supplier Device Package: SP4 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 340 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 6.1 nF @ 25 V |
Produkt ist nicht verfügbar |
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APTGT100DH60TG | Hersteller : Microsemi | IGBT Modules Power Module - IGBT |
Produkt ist nicht verfügbar |
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APTGT100DH60TG | Hersteller : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 600V Type of module: IGBT Semiconductor structure: diode/transistor Topology: asymmetrical bridge; NTC thermistor Max. off-state voltage: 0.6kV Collector current: 100A Case: SP4 Electrical mounting: FASTON connectors; soldering Gate-emitter voltage: ±20V Pulsed collector current: 200A Technology: Field Stop; Trench Mechanical mounting: screw |
Produkt ist nicht verfügbar |